Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures
نویسنده
چکیده
1.—Department of Physics and Astronomy, Youngstown State University, Youngstown, OH 44555, USA. 2.—Department of Physics, Georgia Southern University, Statesboro, GA 30460, USA. 3.—Department of Physics, Auburn University, Auburn, AL 36849, USA. 4.—Present address: Department of Materials Science and Engineering, University of Illinois at Urbana– Champaign, Urbana, IL 61801, USA. 5.—e-mail: [email protected]
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Thermally stable Schottky contacts on n-type GaN using ZrB2
The electrical properties and thermal stability of ZrB2 Schottky contacts deposited on n-type GaN have been studied. As-deposited contacts had a barrier height of 0.80 eV, which decreased to 0.7 eV after annealing at 300 °C, and to 0.6 eV after additional annealing at 400 °C in nitrogen for 20 min. However, the barrier height remained at about 0.6 eV even when the diodes were annealed at 600 °C...
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